ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,555,620, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Memory device" was invented by Chien-An Lai (Hsinchu County, Taiwan), Chung-Cheng Chou (Hsin-Chu, Taiwan) and Yu-Der Chih (Hsin-Chu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided, the memory device includes multiple cells arranged in a matrix of multiple rows and multiple columns. The memory device further includes multiple bit lines each of which is connected to first cells of the multiple cells arranged in a row of the multiple rows. A voltage control circuit is connectable to a selected bit line of the multip...