US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 17 for "High-K dielectric materials with dipole layer" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,368, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"High-K dielectric materials with dipole layer" was invented by Huiching Chang (Hsinchu, Taiwan), I-Ming Chang (Hsinchu, Taiwan) and Huang-Lin Chao (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a transistor comprising a gate stack on a semiconductor substrate by, at least, forming a first dielectric layer on the semiconductor substrate, forming a dipole layer on the dielectric layer; forming a second dielectric layer on the dipole layer, forming a conductive work function...