US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 17 for "Device having nanostructure electrostatic discharge structure and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,396, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Device having nanostructure electrostatic discharge structure and method" was invented by Hsin-Yuan Yu (Hsinchu, Taiwan), Ming-Shuan Li (Hsinchu, Taiwan) and Wun-Jie Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first circuit region including a nanostructure device and a second circuit region offset from the first circuit region. The nanostructure device has a vertical stack of nanostructures disposed in a plurality of first semiconductor layers and a gate structure wrapping around the nanostructures of th...