US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "SOI device structure for robust isolation" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,754, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"SOI device structure for robust isolation" was invented by Lin-Chen Lu (Kaohsiung City, Taiwan), Gulbagh Singh (Tainan City, Taiwan), Tsung-Han Tsai (Miaoli County, Taiwan) and Po-Jen Wang (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "This disclosure provides for robust isolation across the SOI structure. In contrast to forming a charge trap layer in specific areas on the structure, a charge trap layer may be built across the insulating/substrate interface. The charge trap layer may be an implantation layer formed throughout ...