US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Semiconductor structure with different distances between gates and source contacts, and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,772, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure with different distances between gates and source contacts, and method of manufacturing the same" was invented by Yu-Xuan Huang (Hsinchu, Taiwan) and Hou-Yu Chen (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure is provided. A first layout is received, wherein the first layout comprises at least a pattern of an active region extending in a first direction. A second layout comprising a plurality of gate patterns extending in a second direction substa...