US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Semiconductor structure and method of fabricating same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,702,050, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure and method of fabricating same" was invented by Wei-Hao Chen (New Taipei, Taiwan), Li-Hsien Huang (Zhubei, Taiwan), SyuFong Li (Taoyuan, Taiwan), Yao-Chun Chuang (Hsinchu, Taiwan) and Yinlung Lu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device that includes a first die component and at least one second die component. The first die component includes a substrate, a dielectric layer on the substrate, and one or more metal pads positioned on the dielectric layer. ...