US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "Semiconductor device and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,734, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of fabricating the same" was invented by Po-Ting Lin (Taichung City, Taiwan), Wu-Wei Tsai (Taoyuan City, Taiwan), Hai-Ching Chen (Hsinchu City, Taiwan), Yu-Ming Lin (Hsinchu City, Taiwan) and Chung-Te Lin (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first transistor. The first transistor includes a source region, a drain region, a semiconductive material layer, a gate dielectric film stack and a gate electrode. The semiconductive material layer is disposed betwe...