ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,702,078, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Redistribution structure with copper bumps on planar metal interconnects and methods of forming the same" was invented by Hsien-Wei Chen (Hsinchu City, Taiwan), Meng-Liang Lin (Hsinchu, Taiwan), Ying-Ju Chen (Tuku Township, Taiwan) and Shin-Puu Jeng (Po-Shan Village, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "First redistribution interconnect structures having a respective uniform thickness throughout are formed on a top surface of a first adhesive layer over a first carrier wafer. Redistribution dielectric layers and additional redistrib...