ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,974, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Methods for isolation process control and structures thereof" was invented by Wei Che Tsai (Pingtung City, Taiwan), Yuan Tsung Tsai (Tainan City, Taiwan), Hsin-Yi Tsai (Tainan, Taiwan), Ying Ming Wang (Tainan City, Taiwan), Hsien Hua Tseng (Tainan City, Taiwan) and Shih-Hao Chen (Zhubei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for forming a dielectric isolation region between two active regions are disclosed herein. A mandrel is formed on a substrate, then etched to form a trench. Spacers are formed on the sidewalls of the ...