ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,964, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Methods and systems for dry etching" was invented by Fu-Yi Liu (Hsinchu, Taiwan), Chou Feng Li (Hsinchu, Taiwan) and Chih-Hsien Hsu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and systems for dry etching are disclosed. The system includes a wafer clamp ring having a central opening through which a substrate may be treated and a plurality of smaller, outer support holes for receiving pins from plunger assemblies. The outer support holes are tapered and change in diameter. The tapered shape reduces horizontal shifting o...