US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Method for forming a contact plug with improved contact metal sealing" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,977, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming a contact plug with improved contact metal sealing" was invented by Chung-Liang Cheng (Hsinchu, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Li-Zhen Yu (Hsinchu, Taiwan), Huang-Lin Chao (Hsinchu, Taiwan) and Pinyen Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is provided for forming a metal contact plug. In one step, a substrate, which is an Si substrate or an SiO2 substrate, is etched to form a contact hole. In one step, a dielectric liner layer is formed on a sidewall of the contact hole. In one s...