US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "Method, device, and circuit for high-speed memories" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,700,442, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method, device, and circuit for high-speed memories" was invented by Jaspal Singh Shah (Hsinchu, Taiwan) and Atul Katoch (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a plurality of memory cells arranged in an array, a first clock generator connected to the plurality of memory cells and configured to generate a local clock signal to be provided to the plurality of memory cells, a second clock generator connected to an input/output interface connected to the plurality of memory cells, the second clock genera...