US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Memory structure and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,688, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory structure and method for manufacturing the same" was invented by Cheng-Yin Wang (Taipei City, Taiwan), Szuya Liao (Zhubei Hsinchu, Taiwan), Tsung-Kai Chiu (Hsinchu County, Taiwan), Shao-Tse Huang (Hsinchu City, Taiwan), Ting-Yun Wu (Taipei City, Taiwan) and Wen-Yuan Chen (Yangmei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure includes a pull-down transistor and a pull-up transistor stacked vertically in a Z-direction, a pass-gate transistor and a dummy transistor stacked vertically in the Z-direction, a die...