US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "Memory device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,711, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and manufacturing method thereof" was invented by Hung-Li Chiang (Taipei City, Taiwan), Jer-Fu Wang (Taipei City, Taiwan), Chao-Ching Cheng (Hsinchu City, Taiwan), Tzu-Chiang Chen (Hsinchu City, Taiwan) and Chih-Chieh Yeh (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array and a structure of the memory array are provided. The memory array includes flash transistors, word lines and bit lines. The flash transistors are arranged in columns and rows. The flash transistors in each column are in serial connecti...