US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "LDMOS transistor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,732, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"LDMOS transistor device and method for forming the same" was invented by Tsung-Hua Yang (Tainan City, Taiwan), Cheng-Bo Shu (Tainan City, Taiwan), Chia-Ta Hsieh (Tainan, Taiwan), Ping-Cheng Li (Kaohsiung City, Taiwan), Po-Wei Liu (Tainan City, Taiwan), Shih-Jung Tu (Tainan City, Taiwan), Tsung-Yu Yang (Tainan City, Taiwan), Yun-Chi Wu (Tainan City, Taiwan) and Yu-Wen Tseng (Chiayi City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An LDMOS transistor device includes a stepped isolation structure over a substrate, a gate electrode dispos...