US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Isolation structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,735, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Isolation structures" was invented by Feng-Ming Chang (Hsinchu County, Taiwan) and Jing-Yi Lin (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods are provided. An exemplary method according to the present disclosure includes forming a fin-like structure over a substrate; forming an isolation feature in the substrate and adjacent to the fin-like structure substrate; forming a dummy gate structure across the fin-like structure, where the dummy gate structure comprises a first portion disposed d...