US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Integrated circuit device, memory device, and method of manufacturing" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,697, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Integrated circuit device, memory device, and method of manufacturing" was invented by Meng-Sheng Chang (Hsinchu, Taiwan), Chia-En Huang (Hsinchu, Taiwan) and I-Hsin Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device includes a substrate, a bottom semiconductor device over the substrate, and a top semiconductor device over the bottom semiconductor device in a thickness direction of the substrate. The top semiconductor device and the bottom semiconductor device are of a same conductivity type."...