US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "Etch profile control of interconnect structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,976, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd..

"Etch profile control of interconnect structures" was invented by Yu Lun Ke (Hsinchu City, Taiwan), Yu-Wei Kuo (Hsinchu City, Taiwan), Yi-Wei Chiu (Kaohsiung, Taiwan) and Hung Jui Chang (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor structure includes forming an etch stop layer on a substrate, forming a metal oxide layer over the etch stop layer, and forming an interlayer dielectric (ILD) layer on the metal oxide layer. The method further includes forming a trench etch opening over the ILD layer, forming a c...