ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,881, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ternary content-addressable memory cells and methods for forming the same" was invented by Gerben Doornbos (Kessel-Lo, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A four transistor ternary content-addressable memory cell includes a first series connection of a first non-hysteretic transistor (e.g., a thin-film transistor) and a first memory transistor (e.g., a thin-film transistor) including a first memory element configured to store a first binary bit; and a second series connection of a second non-hysteretic transistor and a second me...