US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 25 for "SRAM structure with asymmetric interconnection" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,872, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"SRAM structure with asymmetric interconnection" was invented by Yi-Hsun Chiu (Hsinchu County, Taiwan) and Chia-En Huang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate having a frontside and a backside; a static random-access memory (SRAM) circuit having SRAM bit cells formed on the frontside of the substrate, wherein each of the SRAM bit cells including two inverters cross-coupled together, and a first and second pass gates coupled to the two inverters; a first bit-line dis...