US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 25 for "Semiconductor structure of backside illumination CMOS image sensor and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,879, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure of backside illumination CMOS image sensor and method for forming the same" was invented by Ching-Hung Kao (Tainan City, Taiwan) and Jing-Jyu Chou (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of manufacturing a semiconductor structure of a CMOS image sensor. The method includes providing a substrate; growing an epitaxial layer on the substrate; forming a barrier layer on the epitaxial layer; forming a trench extending into the epitaxial layer; oxidizing t...