US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 25 for "Semiconductor structure having verticle conductive graphene and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,154, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure having verticle conductive graphene and method for forming the same" was invented by Tsu-Chun Kuo (Hsinchu, Taiwan), Shin-Yi Yang (Hsinchu, Taiwan), Yu-Chen Chan (Hsinchu, Taiwan), Shu-Wei Li (Hsinchu, Taiwan), Meng-Pei Lu (Hsinchu, Taiwan) and Ming-Han Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a dielectric layer, and a graphene conductive structure. The dielectric layer is disposed on the substrate, and has an inner lateral surface that is perpen...