ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,126, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method of manufacture" was invented by Yao-Wen Hsu (New Taipei City, Taiwan), Ming-Che Ku (Hsinchu, Taiwan), Neng-Jye Yang (Hsinchu, Taiwan) and Yu-Wen Wang (New Taipei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An opening is formed within a dielectric material overlying a semiconductor substrate. The opening may comprise a via portion and a trench portion. During the manufacturing process a treatment chemical is placed into contact with the exposed surfaces in order to release charges that have built up o...