ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,081, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Semiconductor device and method" was invented by Yao-Wen Hsu (New Taipei, Taiwan), Yun-Ting Chiang (Hsinchu, Taiwan) and Chun-Cheng Chou (Taichung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a multi-layer stack over a semiconductor substrate, the multi-layer stack comprising a plurality of sacrificial layers that alternate with a plurality of channel layers, forming a dummy gate stack over a top surface and sidewalls of the multi-layer stack, forming first spacers on sidewalls of the dummy gate stack, growing a...