ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,885, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Image sensor and method of manufacturing the same" was invented by Szu-Ying Chen (Miaoli County, Taiwan) and Yu-Min Liao (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A CIS has a monolithic transfer gate electrode embedded in the semiconductor substrate. In some embodiments, the transfer gate electrode is below the surface. In some embodiments, the top of the transfer gate electrode is nearly even with or below a bottom of a floating diffusion region. In some embodiments, the transfer gate electrode wraps partially around the ar...