US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 25 for "Hybrid method for forming semiconductor interconnect structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,143, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD (Hsinchu, Taiwan).

"Hybrid method for forming semiconductor interconnect structure" was invented by Shih-Kang Fu (Taoyuan County, Taiwan), Ming-Han Lee (Taipei City, Taiwan) and Shau-Lin Shue (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method that includes depositing a metal layer onto a substrate, subtractive patterning the metal layer into first metal lines, and forming at least one second metal line between two adjacent ones of the first metal lines using a damascene process. The first metal lines have a differe...