US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Guard ring with deep trench isolation structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,897, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Guard ring with deep trench isolation structure" was invented by Cheng Ying Ho (Minxiong Township, Taiwan), Wen-De Wang (Minsyong Township, Taiwan), Kai-Chun Hsu (Yonghe City, Taiwan), Yuh Ruey Huang (Hsinchu County, Taiwan), Chih-Lung Cheng (Tainan City, Taiwan) and Jen-Cheng Liu (Hsin-Chu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A process used to form a first deep trench isolation (DTI) structure in a pixel region of a semiconductor substrate is also used to form a second DTI structure in a guard ring area that isolates the pi...