US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 25 for "Gate dielectric layers for stacked multi-gate device" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,807, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gate dielectric layers for stacked multi-gate device" was invented by Te-Yang Lai (Hsinchu, Taiwan), Yen-Fu Chen (Taipei, Taiwan), Shu-Han Chen (Hsinchu City, Taiwan), Tsung-Da Lin (Hsinchu, Taiwan), Da-Yuan Lee (Hsinchu County, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods are provided. An example method includes receiving a workpiece that includes a substrate, first channel members over a first region of the substrate, second channel members over a second region o...