US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Fin pitch optimization for uniform source/drain structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,855, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin pitch optimization for uniform source/drain structures" was invented by Yu-Hung Lin (Taipei City, Taiwan), Wei Hsin Lin (Taichung City, Taiwan), Hui-Hsuan Kung (Taichung City, Taiwan) and Yi-Lii Huang (Zhubei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor device having fin structures with optimized fin pitches for substantially uniform S/D structures. The semiconductor device includes multiple fin structures on a substrate. The multiple fin structures have a first pitch and a second...