US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Field effect transistor with inner spacer liner layer and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,838, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Field effect transistor with inner spacer liner layer and method" was invented by Tsung-Han Chuang (Hsinchu, Taiwan), Zhi-Chang Lin (Hsinchu, Taiwan), Shih-Cheng Chen (Hsinchu, Taiwan), Jung-Hung Chang (Hsinchu, Taiwan), Chien Ning Yao (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a substrate, a first nanostructure channel above the substrate and a second nanostructure channel between the first nanostructure channel and the substrate. An inn...