US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 25 for "Ferroelectric devices and methods of forming the same" (Belgian Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,759, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Ferroelectric devices and methods of forming the same" was invented by Georgios Vellianitis (Heverlee, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric device and methods of forming the same are described. In some embodiments, the method includes depositing a doped hafnium dioxide layer on a layer, and the doped hafnium dioxide layer has a first oxygen vacancy concentration. The method further includes performing an ultra-high vacuum anneal process on the doped hafnium dioxide layer to increase the first oxygen vacancy co...