US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Carbon-based liner to reduce contact resistance" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,119, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Carbon-based liner to reduce contact resistance" was invented by Po-Hsien Cheng (Taichung City, Taiwan), Chi-Ming Yang (Hsinchu City, Taiwan) and Tze-Liang Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A layer of carbon (e.g., graphite or graphene) at a metal interface (e.g., between an MEOL interconnect and a gate contact or a source or drain region contact, between an MEOL contact plug and a BEOL metallization layer, and/or between BEOL conductive structures) is used to reduce contact resistance at the metal interface, whic...