US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Aluminum nitride dipole dopant film for tuning multi-VT devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,066, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Aluminum nitride dipole dopant film for tuning multi-VT devices" was invented by Chi On Chui (Hsinchu, Taiwan), Cheng-Hao Hou (Hsinchu, Taiwan), Da-Yuan Lee (Jhubei City, Taiwan), Pei Ying Lai (Hsinchu, Taiwan), Yi Hsuan Chen (Hsinchu, Taiwan) and Jia-Yun Xu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a gate dielectric on a semiconductor region, depositing an aluminum nitride layer on the gate dielectric, depositing an aluminum oxide layer on the aluminum nitride layer, performing an annealing process ...