US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 18 for "Semiconductor structure having back-side contact and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,897, issued on Aug. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure having back-side contact and manufacturing method thereof" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming semiconductor sheets on a front-side of a semiconductive layer on a front-side of a substrate; forming a gate strip surrounding each of the semiconductor sheets; forming dielectric layers on the semiconductive layer and at opposite sides of the gate strip; forming source/drain structures on the dielectric layers and on either side of eac...