US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 18 for "Method for forming semiconductor device structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,712,158, issued on Aug. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming semiconductor device structure" was invented by Po-Ju Chen (Hsinchu City, Taiwan), Chun-Hsing Wu (Zhubei City, Taiwan), Fang-Yi Wu (Kaohsiung City, Taiwan), Yi-Wei Chiu (Kaohsiung City, Taiwan) and Chih-Hao Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure is provided. The method includes placing a substrate including a material layer thereon in a plasma chamber. The plasma chamber includes a housing, a first electrode array including a plurality o...