ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,896, issued on Aug. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Interconnect structure and methods of forming the same" was invented by Hsien-Chang Wu (Taichung, Taiwan), Shih-Kang Fu (Taoyuan, Taiwan), Shin-Yi Yang (New Taipei, Taiwan), Hsu-Wei Liu (Taichung, Taiwan), Ting-Ya Lo (Hsinchu, Taiwan) and Ming-Han Lee (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An interconnect structure, along with methods of forming such, are described. The structure includes a dielectric layer, a conductive feature disposed in the dielectric layer, and a conductive layer disposed over the dielectric layer,...