US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 18 for "Interconnect layer and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,905, issued on Aug. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Interconnect layer and method for manufacturing the same" was invented by Kai-Fang Cheng (Hsinchu, Taiwan), Cheng-Chin Lee (Hsinchu, Taiwan), Yen-Ju Wu (Hsinchu, Taiwan), Hsin-Yen Huang (Hsinchu, Taiwan) and Hsiao-Kang Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate and an interconnect layer disposed over the substrate. The interconnect layer includes a dielectric layer, an interconnect structure disposed in the dielectric layer, and an etch stop layer which is disposed on a low...