US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 11 for "Through-substrate via and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,684, issued on Aug. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Through-substrate via and method for forming the same" was invented by Chih Hsin Yang (Zhubei City, Taiwan), Mao-Nan Wang (Kaohsiung City, Taiwan) and Dian-Hau Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming first nanostructures over a first region of a substrate; forming second nanostructures over a second region of the substrate; forming a first gate structure around the first nanostructures; replacing the second nanostructures with isolation regions; and forming a through via extending through isol...