US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 11 for "Three-dimensional memory device with ferroelectric material" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,644, issued on Aug. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Three-dimensional memory device with ferroelectric material" was invented by Chao-I Wu (Zhubei City, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Han-Jong Chia (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes: a first layer stack and a second layer stack formed successively over a substrate, where each of the first and the second layer stacks includes a first metal layer, a second metal layer, and a first dielectric material between the first and the second metal layers; a second dielectric material between th...