US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 11 for "Structures for reducing gap fill defects in a vertically stacked semiconductor device and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,947, issued on Aug. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Structures for reducing gap fill defects in a vertically stacked semiconductor device and methods for forming the same" was invented by Hsien-Wei Chen (Hsinchu City, Taiwan), Meng-Liang Lin (Hsinchu, Taiwan), Ying-Ju Chen (Tuku Township, Taiwan) and Shin-Puu Jeng (Po-Shan Village, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Vertically stacked semiconductor devices and methods of fabrication thereof that include a first semiconductor die bonded to a second device structure in a face-down configuration, a gap fill dielectric layer laterall...