US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Structure and method for deep trench capacitor with reduced deformation" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,655, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Structure and method for deep trench capacitor with reduced deformation" was invented by Fu-Chiang Kuo (Hsinchu City, Taiwan), Hsin-Liang Chen (Hsinchu City, Taiwan), Hsin-Li Cheng (Hsinchu, Taiwan) and Ting-Chen Hsu (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides an embodiment of a method. The method includes patterning a substrate to form trenches; etching the substrate, thereby modifying the trenches with round tips; forming a stack including conductive layers and dielectric layers in th...