US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 11 for "Static random access memory with pre-charge circuit" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,619, issued on Aug. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Static random access memory with pre-charge circuit" was invented by Po-Sheng Wang (Hsinchu, Taiwan), Yangsyu Lin (New Taipei City, Taiwan) and Cheng Hung Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes embodiments of a memory device with a pre-charge circuit. The memory device can include a memory cell, and the pre-charge circuit can include a first transistor and a second transistor. The first transistor includes a first gate terminal, a first source/drain (S/D) terminal coupled to a reference...