ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,683, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure and manufacturing method thereof" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes doping a substrate to form a first well region and a second well region having a different conductivity type than the first well region; forming a first fin structure upwardly extending above the first well region and a second fin structure upwardly extending above the second well region; forming a first gate electrode surrounding the first fin structure and a second ga...