US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Semiconductor device with advanced pad structure and method for forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,251, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with advanced pad structure and method for forming same" was invented by Fu-Chiang Kuo (Hsinchu City, Taiwan), Yu-Hsin Fang (Kaohsiung City, Taiwan) and Hsin-Liang Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device according to the present disclosure includes forming a metal-insulator-metal (MIM) structure in a substrate and forming an interconnect structure over the substrate. The MIM structure includes first electrodes of a first polarity and second electr...