US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Multigate transistors with capping layers and a buffer layer comprising germanium" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,681, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Multigate transistors with capping layers and a buffer layer comprising germanium" was invented by Shahaji B. More (Hsinchu City, Taiwan), Cheng-Han Lee (New Taipei City, Taiwan), Shih-Chieh Chang (Taipei City, Taiwan), Wan-Hsuan Hsieh (Hsinchu City, Taiwan), Chung-En Tsai (Hsinchu County, Taiwan) and Chee-Wee Liu (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a method of forming the same. A semiconductor structure according to the present disclosure includes a ...