US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Method of manufacturing MRAM device between adjacent metal line layers and MRAM device" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,897, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing MRAM device between adjacent metal line layers and MRAM device" was invented by Yu-Jen Chien (Hsinchu, Taiwan), Jung-Tang Wu (Kaohsiung City, Taiwan), Szu-Hua Wu (Zhubei City, Taiwan), Chin-Szu Lee (Taoyuan City, Taiwan) and Meng-Yu Wu (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes: forming a substrate over the substrate, the substrate defining a logic region and a memory region; depositing a bottom electrode layer across the logic region a...