US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 11 for "Method of forming semiconductor device having isolation structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,709, issued on Aug. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Method of forming semiconductor device having isolation structure" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a fin protruding from a substrate, forming first and second gate structures across the fin, the first gate structure having a first gate sidewall facing the second gate structure, the second gate structure having a second gate sidewall facing the first gate structure, recessing a segment of the fin between the first and second gate sidewalls to form a tren...