US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 11 for "Method of forming a semiconductor device having gate spacers with regions of diffused silicon germanium" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,704, issued on Aug. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of forming a semiconductor device having gate spacers with regions of diffused silicon germanium" was invented by Hsu Ming Hsiao (Hsinchu, Taiwan), Hsiu-Hao Tsao (Taichung, Taiwan) and Ming-Jhe Sie (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some implementations described herein provide techniques and semiconductor devices in which a dielectric region is included in a nanostructure transistor. The dielectric region, which may correspond to an air gap, may be located between dielectric spacer layers located along a sidewal...