US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Memory device with alternating metal lines" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,621, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device with alternating metal lines" was invented by Chia-Hao Pao (Kaohsiung City, Taiwan) and Kian-Long Lim (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "One aspect of the present disclosure pertains to a memory device. The device includes a substrate having a first region and a second region adjacent the first region. A first SRAM cell is disposed within the first region, the first SRAM cell having first active regions extending lengthwise along a first direction on the substrate. A second SRAM cell is disposed ...