US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Memory device having backside power vias" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,956, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device having backside power vias" was invented by Ping-Wei Wang (Hsin-Chu, Taiwan) and Jui-Lin Chen (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first source/drain (S/D) epitaxial feature, a second S/D epitaxial feature adjacent to the first S/D epitaxial feature, an insulating structure between the first and the second S/D epitaxial features, and a shared S/D contact over top surfaces of the first and the second S/D epitaxial features. A center portion of the shared S/D conta...